RSU002P03
Transistors
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 20V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
? 30
?
?
V
I D = ? 1mA, V GS =0V
?
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
R DS (on) ?
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r
t d (off) ?
t f ?
?
? 1.0
?
?
?
0.2
?
?
?
?
?
?
?
?
?
0.9
1.4
1.6
?
30
4
5
8
5
30
40
? 1
? 2.5
1.4
2.1
2.4
?
?
?
?
?
?
?
?
μ A
V
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = ? 30V, V GS =0V
V DS = ? 10V, I D = ? 1mA
I D = ? 0.25A, V GS = ? 10V
I D = ? 0.15A, V GS = ? 4.5V
I D = ? 0.15A, V GS = ? 4V
V DS = ? 10V, I D = ? 0.15A
V DS = ? 10V
V GS =0V
f=1MHz
V DD ? 15V
I D = ? 0.15A
V GS = ? 10V
R L =100 ?
R G =10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD
Min.
?
Typ.
?
Max.
? 1.2
Unit
V
Conditions
I S = ? 0.1A, V GS =0V
Rev.A
2/4
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